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A
Australian
National University
Department of
Electronic Materials Engineering
R.S.Phys.S.E.
The ANU
Canberra
ACT 0200
Australia
Tel: +61 2 6249
0020
Fax: +61 2 6249 0511
E-mail:
eme@rsphysee.anu.edu.au [Newspage]
GaN
research includes ion beam processing such as understanding
damage accummulation during ion implantation in GaN. Efforts
are underway to develop processing of GaN for blue light
emitting diodes and blue lasers. The team has an affiliation
with Ledex of Taiwan.
B
University at
Buffalo
The State University of New
York
Buffalo
NY 14260-1900
USA
Tel: +1 (716)
645-3115 EXT 1205
Fax: +1 (716) 645-5964
E-Mail:
anc@eng.buffalo.edu
Web: http://www-ee.eng.buffalo.edu/faculty/cartwright/research/Gallium_Nitride/index.html
The Center for Advanced Photonic and
Electronic Materials (CAPEM) was formed in January, 1997 to
foster interactions and collaboration among the diverse
research and development activities at the University at
Buffalo in the areas of photonic and electronic materials, and
to facilitate cooperative multidisciplinary activities and
multi-investigator research projects.
Present activities are focused on
compound semiconductor materials, nanostructures and devices,
primarily for photonic and spintronic applications.
The Laboratory for Advanced Spectroscopic
Evaluation, located in 119 Bonner Hall, contains a number of
automated spectroscopic tools for characterizing semiconductor
photonic devices. These devices consists of homo- and
hetero-structures of III-V materials such as
GaAs/InGaAs/AlGaAs and GaN/AlGaN/InGaN, and II-VI materials
such as ZnSe/ZnCdSe/ZnTe.
Technical
University Braunschweig
Institute of Technical Physics
Technical University Braunschweig
Mendelssohnstrasse 2
38106 Braunschweig
Germany
Tel: +49 0531 391 8501
Fax: +49 0531 391 8511
E-mail: a.hangleiter@tu-bs.de
Net:
http://mammut.techphys.nat.tu-bs.de/englisch/Forschung/Halbleiter/index.html
Contact:
Professor Andreas Hangleiter, Executive Head of the Institute
of Technical Physics, Technical University Braunschweig and
Head of Research Group Applied Semiconductor Physics.
Research interests include laser
characteristics of Group III-nitrides, spontaneous and
piezoelectric polarization in nitrides, recombination
processes and loss mechanisms in nitride heterostructures and
optimization of ultraviolet LEDs, the group's research
projects are supported by the Deutsche Forschungsgemeinschaft
and the Bundesministerium für
Bildung und Forschung.
C
University of
California Santa Barbara
College of
Engineering
Office of the Dean
Engineering I, Room
1038
Santa Barbara
CA 93106-5130
USA
Tel: +1 (805)
893-3207
http://www.engineering.ucsb.edu/
An important centre becasue of its long
history of GaN development and most recently it has become the
home of the GaN pioneer, Shuji
Nakamura. He is now professor of materials at the
University of California at Santa Barbara's College of
Engineering.
At UCSB, Nakamura serves as director of
the Center for Solid State Lighting and Displays, which is a
key component of the California NanoSystems Institute,
initiated two years ago by Gov. Gray Davis to seed the future
of the State's high tech economy.
Umesh
Mishra, professor of electrical and computer
engineering at the University of California at Santa Barbara
(UCSB), has teamed up with his old mentor and dissertation
advisor at Cornell, Lester Eastman,
(Professor of Engineering, Cornell University, NY, USA) to
write an article on the prospects for the gallium nitride
transistor. The article, "The
Toughest Transistor Yet," is the cover story of the May
issue of IEEE Spectrum.
Both Mishra's and Eastman's
research groups have made a FET out of GaN. Mishra has also
used this most promising of compound semiconductors to make a
bipolar transistor. His was the first research group
successfully to do so.
GaN's prominence as the currently
most promising compound semiconductor is due in large measure
to the work of one man - Mishra's UCSB colleague, Materials
Professor Shuji Nakamura, who used GaN to create the first
blue, green, uv, and white LEDs, as well as a blue laser.
Nakamura's breakthrough work with the material began in
the late 1980s and focused on its optical or light producing
properties. Mishra and his UCSB colleague Materials
Professor Steven DenBaars were among the
group of early researchers working on making electronic
devices out of the material.
The Interdisciplinary Center for
Wide Bandgap Semiconductors and The Solid State Lighting &
Display Center
A useful reference site for GaN-related
journal papers can be found at this website.
The main page can be found here.
CEA-Grenoble
DRFMC/ SP2M,
17 rue
des Martyrs,
38054 Grenoble Cedex 9,
France.
The
CEA-Grenoble research group is involved in the MOVPE growth of
c-GaN and AlN on silicon and sapphire and has published work
on the surface morphologies and crystallographic structures of
GaN layers. For example, the thermal treatment under propane
at 1300-1400C - to produce a very thin cubic SiC layer - has
been used to prepare silicon (001) wafers for growth of cubic
GaN and AlN by ECR plasma- assisted MBE (ECRMBE).
CEGELY
UPRESS-A CNRS 5005,
INSA
de Lyon,
Bat 401,
20 avenue A. Einstein,
69121
Villeurbanne Cedex,
France.
Tel: +33 472 43 87 24
Fax: +33 472 43 85 30
Research includes SiC pn
junction diodes and other electronic devices.
CRHEA-CNRS
Centre de Recherche sur
l'Heteroepitaxie et ses Applications (CRHEA-CNRS)
Parc de
Sophia Antipolis,
Rue Bernard Gregory,
Sophia
Antipolis,
06560 Valbonne,
France.
The CNRS group
has published many papers on MOVPE-grown GaN: yellow band and
deep levels in undoped MOVPE GaN, and alternative N precursors
and Mg doped GaN. The Materials Research Laboratory is also
involved in work on the growth of prismatic domains in
cyclotron assisted MBE of GaN/SiC (in collaboration with the
University of Illinois).
CNRS is the co-ordinating group
for the pan-European LAQUANI project on wide bandgap materials
for solid state semiconductor blue-green lasers. Results from
this collaboration include improvement of the ELOG process.
The approach omits the usual mask layer preparation and uses
self-organised islands as the starting point for the GaN
epilayer. The CNRS project is promising since it has
demonstrated the possibility of selective lateral epitaxy
without the need for the ELOG mask. Most importantly, the CNRS
approach is entirely in situ in a single growth chamber. This
is much more convenient and promises significant savings in
time and cost. Moreover, it is possible to repeat lateral
growth several times on the same substrate.
CNRS is also a
leading participant in the EU ESPRIT Project on III-V Nitrides
– program co-ordinator is Prof. Pierre Gibart). Work includes
studies of the impact of GaN buffer growth conditions on
photoluminescence and background carrier concentration of
MOVPE-grown bulk GaN.
CSIRO -
Telecommunications & Industrial Physics
PO Box
76
Epping
NSW 1710
Tel; +61 2 9372 4222
Fax:
+61 2 9372 4400 Net: http://www.csiro.au/index.asp?type=division&id=Telecomms%20and%20Industrial%20Physics&xml=researchPrograms&style=divisionResearchPrograms
Dr.
Zain Kachwala and Dr. Grant Griffiths are conducting research
into GaN processing for high power microwave
devices.
The CSIRO
Gigatec Facility has fabricated amplifiers, mixers,
oscillators, switches, filters, doublers, modulators and
detectors (both microwave and optical) for satcoms, defence
and wider telecom industries. To maintain a leading edge in
the semiconductor field, it is investigating processing
techniques for GaN for high power MMICs including world-class
ohmic contacts and fabricated GaN HEMTs using optical
lithography.
D
E
F
G
Groupe d'Etude des
Semiconducteurs
GES-CNRS,
CC074 Université
Montpellier II,
Place E. Bataillon,
34095 Montpellier
Cedex 5,
France.
Researchers are involved in work on
Raman determination of the phonon deformation potentials in
GaN as well the growth of MOVPE GaN layers on sapphire and the
correlation between surface morphologies and crystallographic
structures. Other research areas include strain effects on
hexagonal GaN epilayers grown on sapphire, ZnO and SiC.
The
Semiconductor Group’s GaN team, headed by Dr. Olivier Briot,
has an Aixtron AIX 200/4RF-S MOVPE reactor for the growth of
nitrides, in particular AlGaN based structures for detectors
and electronic applications.
H
Helsinki University of
Technology
P.O. Box 1000,
Fin 02015
HUT,
Finland.
Tel: +358 94 511
This university is a
"subcontractor" to the University of Paderborn in the
pan-European LAQUANI project on wide bandgap materials for
solid state semiconductor blue-green lasers.
I
IMEC
Kapeldreef 75,
B-3001
Leuven,
Belgium.
Tel: +32 16 281211.
IMEC is an
inter-university microelectronics centre, founded in 1984 by
the Flanders Government in Belgium. With over 3.6 m2
cleanroom, it is the largest of its kind in Europe.
III-nitride work is concentrated on GaN on sapphire for blue
LEDs and lasers based on MOVPE, using a Thomas Swan vertical
rotating disk growth system. IMEC collaborates with other
institutions including: Trinity College Dublin, the Technical
University of Delft and the University of Ghent. At the
associated University of Antwerp the UIA group is working on
organic light emitting semiconductors for LEDs and sensors,
etc.
J
K
Kansas
State University
Department of Physics, 116
Cardwell Hall, Kansas State University, Manhattan, KS 66506
USA
Email: Jiang@phys.ksu.edu Net: http://www.phys.ksu.edu/area/GaNgroup/index.html
Research at KSU is focused on GaN, AlGaN, InGaN, and
InAlGaN wide band gap semiconductors. Effort can be divided
into four areas: Optical Studies; Transport Studies; Materials
Growth by MOCVD; Device Fabrication.
One of the better maintained research GaN websites with
lots of useful illustrated info on their work and kept up to
date fairly often. From here
you can go to other sites to read what others have been
reporting on their interesting work on 'microLEDs' and UVLEDs
and so on.
L
Lawrence
Berkeley National Laboratory
Materials
Sciences Division, Ernest Orlando Lawrence Berkeley National
Laboratory, 1 Cyclotron Road, MS 66 Berkeley, CA 94720
USA
Tel: +1 510 486 4755; Fax: +1 510 486 7768
Email:
MCHolm@lbl.gov Net: http://www.lbl.gov/msd
Contact:
Meg Holm
The Materials Sciences Division (MSD) consists of two
major centers, the Center for X-Ray Optics and the National
Center for Electron Microscopy, as well as numerous smaller
programs and projects. These activities involve 52 independent
investigators, most of whom are University of California (UC)
faculty. Another good website elegant, clean and informative
but it has a fair amount of non-nitride research exposition
too. You can read about their nitride solar cell work here
and you could find out about how the world's
smallest UV nanolasers were developed.
LETI CEA Technologies
Advancees
DMITEC-CENG,
17 rue des
Martyrs,
38054 Grenoble Cedex 9,
France.
Work studies
in wide bandgap semiconductors includes structural studies of
homoepitaxial grown 4H- and 6H-SiC epliayers grown on
off-oriented SiC substrates by TEM and AFM.
LPM (UMR CNRS 5511)
INSA de Lyon,
Bat 502,
20 avenue A. Einstein,
69121 Villeurbanne
Cedex,
France.
Research includes SiC pn junction diodes
and other electronic devices.
LTPCM - ENSEEG
Domaine
Universitaire,
BP 75,
Saint Martin D'Heres
38402,
France.
Tel: +33 4 76826532
Fax: +33 4
76826677
SiC bulk crystal growth and sublimation process
modelling.
M
Macquarie University
Semiconductor Science and Technology Laboratories (SSTL)
School of Mathematics, Physics, Computing and Electronics,
NSW 2109,
Australia.
Tel: +61 2 850 8912
Professor Trevor Tansley and his team conduct research
into: photoluminescence and Raman characterization of
GaN epilayers; fast UV detectors using short lifetime
GaN layers grown by LT-MOVPE; electron transport in
nitride semiconductors; piezoelectric properties of
GaN; work on microwave-plasma and excimer laser stimulation
in low temperature MOVPE of Group III nitrides; conventional
MOVPE of narrow-gap III-V antimonide heterostructures;
monochrome and bicolour devices in AlGaAs and double-barrier
QWIPs.
Otto-von-Guericke
University of Magdeburg
Dept
of Semiconductor Epitaxy
FNW/IEP/AHE
Postfach 4120, 39016 Magdeburg, Germany.
Tel:
+49 391 67 18668
Fax:
+49 391 67 11130
Under
Professor Alois Krost, the DSE conduct research into
III-nitrides on silicon and related topics. In German
and English, the site is attractive with illustrations
and links. Amongst the featured papers are links to
articles on the heteroepitaxy published in III-Vs
Review, CSM
and Nature.
University of Melbourne
School of
Physics
Parkville 3052
Australia
Tel: +61 3 9344
7670
Fax: +61 3 9347 4783
Researching into nitride
semiconductor film growth by pulsed laser deposition, and
Raman spectroscopy.
Université de Montréal
Laboratory
for the Integration of Sensors and
Actuators,
Montréal,
Québec,
Canada.
LISA is a
laboratory of the Engineering physics Departement of École
Polytechnique of Montréal, which is an affiliated school of
Université de Montréal in Montréal, Québec, Canada. research
themes include high-speed microelectronics, gas sensors,
physical sensors, micro-electro-mechanical systems and
materials science. The work of the group includes fundamental
physics as well as the fabrication and testing of porous
silicon devices including solar cells and UV
detectors.
High performance devices such as lasers,
photodetectors (discrete and array), photo-diodes,
photocathodes, etc., have to be fabricated using a variety of
epitaxial techniques: VPE, LPE, MOVPE, and MBE. The Solid
Phase Epitaxy (SPE) technique is a FSF patented technology for
the epitaxial growth of semiconductor crystals using chemical
vapour deposition technique.
N
University of New South Wales
Sydney 2052
Australia
Tel: 61 2 9385
1000
Professor Michael Gal's team are researching the
optical charcterisation of GaN epitaxial layers.
University
of Nottingham
Professor P C Main
Professor of
Physics; Head of School
School of Physics and
Astronomy
University of Nottingham
University
Park
Nottingham NG7 2RD UK
Tel: +44 (0)115 951
5145
Fax: +44 (0)115 951 5187
E-mail:
Peter.Main@nottingham.ac.uk
WS: http://www.nottingham.ac.uk/~ppzgan/Nithome.htm
The Semiconductor Physics Group research
interests range from the development of new semiconductor
materials to fundamental studies of quantum phenomena. We have
extensive growth and fabrication facilities for III-V arsenide
and nitride semiconductor systems and extensive clean room
facilities for device fabrication.
Situated in the historic city of
Nottingham, the School of Physics and Astronomy has had a long
and successful involvement in Nitride semiconductor research.
Group III-Nitride semiconductors are used for both electronic
and opto-electronic device applications.
The interdisciplinary activity on the
growth of Group III-Nitrides for electronic and opto
electronic applications was established at the University of
Nottingham (UNOTT) in October 1991 when Professors Tom Foxon
and John Orton were appointed to chairs in the Schools of
Physics and Astronomy (P&A) and Electrical and Electronic
Engineering (E&EE), respectively. In the school of P&A
we are responsible for the growth of nitride semiconductors
using two MBE machines and one MOVPE machine, we are also
responsible for structural assessment of the films using X-ray
diffraction.
O
P
Peking University
Department of
Physics and Mesoscopic Physics Lab.,
Peking
University,
Beijing 100871,
PR China.
Researchers at
this establishment have published work into low temperature
photoluminescence properties of InGaN films grown on (0112)
Al2O3 and (0001) Al2O3 substrates by low pressure
MOVPE.
High Pressure Research
Center of the Polish Academy of
Sciences
Sokolowska 29, 01-142 Warsaw,
Poland
http://www.unipress.waw.pl/
The national Polish GaN consortium
achieved another milestone on its way towards the development
of a blue laser. The process demonstration was successfully
completed only two weeks after the technical installation of
the new AIXTRON GaN MOCVD system.
The Polish GaN consortium consists of
major research institutions like Warszaw University, UNIPRESS
and ITME. The consortium decided to place the new AIX
200/4RF-S reactor for Nitrides at ITME along side their AIX
200/4 for GaAs and InP, which has been producing various
state-of-the-art optical and electronic devices over many
years.
Q
R
S
Shanghai Institute of
Metallurgy
State Key Laboratory of Functional
Materials for Informatics,
Chinese Academy of Sciences,
Shanghai 200050,
PR China.
Growth and mosaic model
of GaN grown directly on 6H—SiC by DC-PAMBE in collaboration
with the Drude Institute for Solid State Electronics, Berlin,
Germany.
Shanghai University
School of
Materials Science & Engineering,
Shanghai 201800,
PR
China.
This institute is involved in the study of the
deposition of diamond films – for example by the microwave
plasma CVD technique, the group has successfully made films of
diamond on alumina substrates via a pre-deposition carbon
layer.
University of Sydney
Optical Fibre
Technology Centre,
University of
Sydney,
Sydney,
Australia.
This group is concerned
with the development of blue lasers for improved data storage,
surgical techniques and other applications. The project is
supported by IBM and the Federal Government of Australia. The
University is also conducting research into electron
microscopy characterisation of defects in epitaxial and ion
implanted GaN.
University of Technology, Sydney
PO
Box 123,
Broadway
Sydney
NSW 2007
Australia
Researching cathodoluminescence
characterisation of GaN epilayers, single crystals, ion
implanted GaN layers. Also application of environmental
scanning electronic microscopy for the defection of defects.
T
Tampere University of Technology (TUT)
P.O. Box 692,
Fin
33101,
Tampere,
Finland.
Tel: +358 3 365 3477.
In
1995, this university produced a blue-green laser diode which
lasted for one whole week, becoming the first European,
ZnSe-based, blue-green laser that operated at room temperature
for more than a few minutes. TUT's laser was the world's first
RT blue-green laser which had an inverted internal structure.
The university collaborates with Trinity College Dublin
and University of Gent-IMEC on II-VI research.
Tutcore Ltd,
a spin-off company for the university was founded in 1991. It
specializes in epitaxial growth and processing of
optoelectronics devices such as laser diodes, photodetectors
and solar cells. It also manufactures laser diode testing
systems and produced the world's first GaInAsP production MBE
reactor. Tutcore was acquired by Coherent in
1996.
Tsinghua University
School of
Materials Science & Engineering,
Beijing 100084,
PR
China.
This school has published work on the diffusion of
Al through the GaN buffer layer during LP-MOVPE growth.
U
V
W
University of Western
Australia
Perth
Australia
The team led by
Professor Laurie Faraone are researching GaN based UV
detectors, design, fabrication and testing; modelling of UV
detectors based on GaN/AlGaN system for solar blind UV
detectors; GaN based microcavities.
XYZ
Worth A
Look:
MIJ-NSR
The MRS
Internet Journal of Nitride Semiconductor Research
(MIJ-NSR), is a Peer-Reviewed, Archival Journal devoted to the
Group III - Nitride semiconductors. It contains many links to
academic and industrial WBGSC R&D worldwide.
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