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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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SFH600-0/-1/-2/-3/-4
OPTICALLY COUPLED ISOLATORS

Circuit

Features

2800 Volt Isolation
High DC Current Transfer Ratio, from 40-80% to 200-400%
Low Cost Dual-In-Line Package

Description

The SFH600 series are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±2800Vrms (1 minute)

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation
Derate Linearly:
60mA
6V
1.5A (tp=10µs)
100mW
1.33mW/°C above 25°C

Output Transistor

Collector-Emitter Voltage:
Emitter-Base Voltage:
Collector-Base Voltage:
Collector Current:
Collector Current:
Power Dissipation:
Derate Linearly:
70V
7V
70V
50mA
100mA (t=1ms)
150mW
2.00mW/°C above 25°C

Electro-optical Characteristics: (Ta=25°C)

INPUT PARAMETER CONDITIONS MIN TYP MAX UNIT
VF Forward Voltage IF=60mA
1.2 1.65 V

Capacitance VR=0, f=1MHz
30 40 pF
IR Reverse Current VR=6V

10 µA
VR Reverse Breakdown Voltage IR=100µA 6

V
OUTPUT
BVCEO Collector-Emitter Voltage IC=1mA, IB=0 70

V
BVECO Emitter-Collector Voltage IE=100µA, IC=0 7

V
BVCBO Collector-Base Voltage IC=100µA 70

V
CCE Capacitance f=1MHz, VCE=5V

5.2 pF
CCB f=1MHz, VCB=5V 6.5 pF
CEB f=1MHz, VEB=5V 9.5 pF
ICEO Leakage Current VCE=10V, IF=0
SFH600-0/-1/-2
5 35 nA
SFH600-3/-4
12 70 nA
COUPLED PARAMETER CONDITIONS MIN TYP MAX UNIT
IC/IF

DC Current Transfer Ratio

IF=10mA, VCE=5V
SFH600-0 40
80 %
SFH600-1 63 125 %
SFH600-2 100 200 %
SFH600-3 160 320 %
SFH600-4 200 400 %
RIO Input-to-Output Isolation Resistance VIO=500V, (note 1) 100

Gohm
VCE(SAT) Collector-Emitter Saturation Voltage IF=10mA, IC=2.5mA
0.2 0.4 V
CIO Capacitance Input to Output f=1MHz (note 1) 0.6
pF
TD Delay Time IF=10mA, RL=75ohm, VCE=5V, TA=25°C 3 4.6 µs
TR Rise Time 2 3 µs
TS Storage Time 3.3 4 µs
TF Fall Time 2.8 3.3 µs
fG Cut-off Frequency
250 kHz
TON Turn-on Time
SFH600-0 RL=1kohm, IF=20mA
4 5.8 µs
SFH600-1/-2 RL=1kohm, IF=10mA 4.5 6.2 µs
SFH600-3/-4 RL=1kohm, IF=5mA 6 8 µs
TR Rise Time
SFH600-0 VCC=5.0V, IF=20mA
3 4 µs
SFH600-1/-2 VCC=5.0V, IF=10mA 3.3 4.2 µs
SFH600-3/-4 VCC=5.0V, IF=5mA 4 5.5 µs
TOFF Turn-off Time
SFH600-0 VCC=5.0V, IF=20mA
20 25 µs
SFH600-1/-2 VCC=5.0V, IF=10mA 24 27 µs
SFH600-3/-4 VCC=5.0V, IF=5mA 25 31 µs
TF Fall Time
SFH600-0 VCC=5.0V, IF=20mA
12 14 µs
SFH600-1/-2 VCC=5.0V, IF=10mA 13 15 µs
SFH600-3/-4 VCC=5.0V, IF=5mA 15 18 µs

Notes

1. Measured with input leads shorted together and output leads shorted together.

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