Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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AC or Polarity Intensive Input
High Isolation Resistance
High
Isolation Voltage
Fast Switching Speed
Built in Reverse Polarity Input
Protection
100% Test on Electrical Parameters
The IS733 consists of two Gallium Arsenide Infrared emitting diodes connected in inverse parallel coupled with a silicon phototransistor in a dual in-line package. Surface Mount Option Available.
Telecommunications, Modem, Data Systems, Switch Mode Power Supplies, Telephone Systems.
Absolute Maximum Ratings (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Test Voltage: |
-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ±4000Vrms (Transient Overvoltage, t=10s) |
Output Transistor | |
| Collector-emitter voltage BVCEO: Emitter-base voltage BVEBO: Collector Dark Current: Power Dissipation: Derate Linearly: |
30V 5V 100nA 300/500mW 2.00mW/°C above 25°C |
Infrared Emitting Diode | |
| Power Dissipation: Derate Linearly: Input Current (RMS): Input Current (Peak): |
100mW 2.00mW/°C above 25°C 60mA ±1A |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| Ct | Terminal Capacitance | f=1MHz, V=0 | 250 | pF | ||
| VF | Forward Voltage | IF=±10mA | 30 | 1.2 | 1.5 | V |
| IR | Reverse Current | VR=4V | 10 | µA | ||
| OUTPUT | ||||||
| BVCEO | Collector-emitter Voltage | IC=1mA | 30 | V | ||
| BVECO | Emitter-collector Voltage | IE=0.1mA | 7 | V | ||
| ICEO | Collector-emitter Dark Current | VCE=20V, IF=0 | 100 | nA | ||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| IC/IF | DC Current Transfer Ratio | IF=±10mA, VCE=1V | 100 | % | ||
| RISO | Input-to-output Isolation Resistance | VIO=500V, RH=40~60% | 100 | 100 | Gohm | |
| VCE(SAT) | Collector-emitter Saturation Voltage | IF=±10mA, IC=0.5mA | 0.4 | V | ||
| CIO | Capacitance Input to Output | V=0, f=1MHz | 0.6 | 1 | pF | |
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