Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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High CTR - 1000% Min
5000 V Isolation
High Collector-Emitter
Breakdown Voltage of 200 V, 300 V or 400 V Min
Low Input Current Requirement
- 1 mA
The IS660, IS661 and IS662 are optically coupled isolators consisting of a
Gallium Arsenide infrared emitting diode and NPN silicon photodarlington
transistor connected with diffusion resistor between the base and emitter at the
output to minimise dark current, mounted in a standard 6-pin dual-in-line
package. Surface Mount Option Available.
All electrical parameters are 100%
tested. Specifications are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: |
-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ±5000V |
Input Diode | |
| Forward DC Current: Forward Current Peak: Reverse DC Voltage: Power Dissipation: Derate Linearly: |
60mA 1A (1µs p.w. 300pps) 6V 70mW 0.93mW/°C above 25°C |
Output Transistor | |
| Collector-Emitter Voltage, BVceo: Collector-Base Voltage, BVcbo: Emitter-Base Voltage: Power Dissipation: Derate Linearly: |
200V (IS660) 300V (IS661) 400V (IS662) 200V (IS660) 300V (IS661) 400V (IS662) 6V 300mW 4.0mW/°C above 25°C |
Package | |
| Total Power Dissipation: Derate Linearly: |
350mW 4.67mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| VF | Forward Voltage | IF=10mA | 1.2 | 1.5 | V | |
| IR | Reverse Current | VR=6.0V | 10 | µA | ||
| VR | Reverse Breakdown Voltage | IR=10µA | 6.0 |
V | ||
| OUTPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| BVCEO | Collector-Emitter Voltage | |||||
| IS660 | IC=1mA, IF=0 | 200 | 260 | V | ||
| IS661 | 300 | 350 | V | |||
| IS662 | 400 | 440 | V | |||
| BVCBO | Collector-Base Voltage | |||||
| IS660 | IC=0.1mA, IF=0 | 200 | V | |||
| IS661 | 300 | V | ||||
| IS662 | 400 | V | ||||
| BVEBO | Emitter-Base Voltage | IE=0.1mA, IF=0 | 6 | V | ||
| ICEO | Collector-Emitter Dark Current | IF=0, VCE=100V | 100 | nA | ||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| CTR | DC Current Transfer Ratio IC/IF, note 2 | IF=1mA, VCE=2V, IB=0 | 1000 | 5000 | % | |
| RIO | Input-to-Output Isolation Resistance | VIO=500V, note 1 | 100 | Gohm | ||
| VCE(SAT) | Collector-Emitter Saturation Voltage | IC=100mA, IF=10mA | 1.2 | V | ||
| CIO | Capacitance Input to Output | V=0, f=1MHz | 0.6 | pF | ||
| TR | Output Rise Time | IC=20mA, VCE=2V, RL=100ohm | 130 | 250 | µs | |
| TF | Output Rise Time | 30 | 70 | µs | ||
| fC | Cut-Off Frequency | 1 | 4 | kHz | ||
| Input-to-Output Isolation Voltage | Note 1 | 5000 | V | |||
1. Measured with input leads shorted together and output leads shorted
together.
2. Current Transfer Ratio can be selected up to 15000% depending
on quantity.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date.