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IL100, IL101

Circuit
Features
Description
Absolute Maximum Ratings
Recommended Operating Conditions
Truth Table
Electrical Characteristics
Switching Characteristics

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Circuit

Features

Very High Speed: 65ns (IL100)
Typical Propagation Delay Time
DTL/TTL Compatible - 5V Supply
Three State Output Logic for Multiplexing
Built-In Schmitt Trigger to avoid Oscillation
Faraday Shielded Photodetector for Improved Common Mode Rejection
UL Recognised

Description

The IL100 and IL101 are optically-coupled pairs consisting of a Gallium Arsenide Phosphide LED and a silicon monolithic integrated circuit including a photodetector. High speed digital information can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. They can be used to replace pulse transformers in many digital interface applications. A built-in Schmitt Trigger provides hysteresis to reduce the possibility of oscillation. Surface Mount Option Available.

Procedures and Definitions

1. The IL100 and IL101 are defined in terms of positive logic.
2. A ceramic capacitor (0.01µF min) should be connected from pin 8 to pin 5 to stabilise the operation of the switching amplifier; failure to do so may inpair the switching properties.
3. All voltages are referenced to network ground (pin 5). Current flowing toward a terminal is considered positive.
4. No external pull-up is required for a logic (1).

Absolute Maximum Ratings (25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +125°C
0°C to +70°C
260°C for 10s, 1.6mm below seating plane
±1500V (IL101)
±2500V (IL100)

Input Diode

Forward Current:
Reverse Voltage:
Enable Voltage:
10mA
5V
5.5V (not to exceed Vcc by more than 500mV)

Output Transistor

Supply Voltage VCC:
Current IO:
Voltage VO:
Collector Power Dissipation:
7V
100mA
7V
100mW

Recommended Operating Conditions

PARAMETER SYMBOL MIN MAX UNIT
Input Current, High Level IIN (1)
10 mA
Supply Voltage, Output VCC 4.5 5.0 V
Fan Out (TTL Load) N
10
Operating Temperature TA 0 70 °C

Truth Table

INPUT ENABLE OUTPUT
1 1 0
0 1 1
1 0 Off
0 0 Off

Electrical Characteristics

(Over recommended temperature Ta= 0°C to 70°C u.o.s.)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT NOTES
VOUT(0) Logic (0) Output Voltage VCC=5.5V, VG=2.4V, IOUT(SINKING)=16mA,
IIN=(IL101: 10mA; IL100: 5mA)

0.4 0.6 V
IG(0) Logic (0) Gate Current VCC=5.5V, VG=0.5V -1.6 -2.0 mA
IG(1) Logic (1) Gate Current 0
mA
ICC(1) Logic (1) Supply Current VCC=5.5V, VG=0.5V, IIN=0 18 22 mA
ICC(0) Logic (0) Supply Current VCC=5.5V, VG=0.5V, IIN=10mA 18 22 mA
ICC
VCC=5.5V, VG=2.4V, IIN=0 13 16 mA
VCC=5.5V, VG=2.4V, IIN=10mA 17 21 mA
BVIO Insulation Voltage (Input to Output) TA=25°C IL101: 1500
IL100: 2500


V 5
RIO Resistance VIO=500V, TA=25°C 10

ohm 5
CIO Capacitance f=1MHz, TA=25°C
0.6 0.8 pF 5
CMRV(1) Common Mode Rejection Voltage to Logical (0) Level f=10MHz, RL=350ohm, TA=25°C, VOUT(MIN)=2V, IIN=0mA
60
Vac p-p 6
CMRV(0) Common Mode Rejection Voltage to Logical (1) Level f=10MHz, RL=350ohm, TA=25°C, VOUT(MAX)=0.6V, IIN=7.5mA
60
Vac p-p 6
CTR Current Transfer Ratio VCC=5V, RL=100ohm, IIN=5.0mA, TA=25°C
1000
% 7
VF Forward Current IIN=10mA, TA=25°C 1.2 1.5 1.75 V 8
BVR Reverse Breakdown Voltage IIN=10µA, TA=25°C 5

V
CIN Capacitance V=0, f=1MHz, TA=25°C
25
pF
IIN(1) Logic (1) Input Current to ensure Logic (0) Output
5

mA
IIN(0) Logic (0) Input Current to ensure Logic (1) Output

250 µA
VG(1) Logic (1) Gate Voltage
2.0
V
VG(0) Logic (0) Gate Voltage

0.8 V
IOUT(OFF)
VCC=5.5V, VO=1.5V, VG=0, IIN=0.10mA -100 +100 µA

Switching Characteristics

SYMBOL PARAMETER CONDITIONS PART TYP MAX UNIT NOTES
tPD(1) Propagation Delay Time to Logical (1) Level RL=350ohm, CL=15pF, TA=25°C, VCC=5V,
IL100: IIN=7.5mA,
IL101: IIN=10mA
IL100 65 75 ns 1
IL101 100 200 ns 1
tPD(0) Propagation Delay Time to Logical (0) Level IL100 65 75 ns 2
IL101 100 200 ns 2
tR-tF Output Rise-Fall (10-90%) IL100 15
ns
tG(1) Propagation Delay Time of Gate VG(1) to VG(0) RL=350ohm, CL=15pF, TA=25°C, VCC=5V, IIN=7.5mA, VG(1)=2V, VG(0)=0.5V IL100 15
ns 3
tG(0) Propagation Delay Time of Gate VG(0) to VG(1) IL100 15
ns 4

Notes

1. The tpd(1) propagation delay is measured from the 3.75mA point on the trailing edge of the input pulse to the 1.5V trailing edge of the output pulse.
2. The tpd(0) propagation delay is measured from the 3.75mA point on the leading edge of the input pulse to the 1.5V leading edge of the output pulse.
3. The tg(1) gate propagation delay is measured from the 1.5V point of the trailing edge of the input pulse to the 1.5V point on the trailing edge of the output pulse.
4. The tg(0) gate propagation delay is measured from the 1.5V point on the input pulse to the 1.5V point on the leading edge of the output pulse. The input diode is DC biased to 10mA (Iin(1)).
5. Pins 2,3 shorted together, and pins 5,6,7,8 shorted together.
6. CMRV(1) is the maximum tolerable common mode voltage to assure that the output will remain in a logic (1) state (Vout > 2.0V). CMRV(0) is the maximum tolerable common mode voltage to assure that the output will remain in a logic (0) state (Vout < 0.6V).
7. DC Current Transfer Ratio is defined as the ratio of the output collector current to the forward bias input current times 100%.
8. At 10mA, Vf decreases with increasing temperature at the rate of 1.6mV/°C.

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