ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer

Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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H11M3, H11M4
Optoisolator GaAlAs Infrared Emitting Diode and Light Activated SCR

Circuit

Features

High blocking voltage, 600 V minimum
High isolation voltage, 3750 Vrms minimum (steady state)
High efficiency, low degradation, liquid epitaxial IRED
Logic compatible drive current, 7 mA at 1.5 V maximum
Unique, high performance glass dielectric construction

Description

The H11M4-H11M6 contain a gallium-aluminium-arsenide infrared emitting diode coupled to a unique high voltage silicon controlled rectifier within a dual in-line package. These devices are optimised for high performance and long life. They are especially suited for the control of industrial AC power lines from low voltage logic integrated circuitry. Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings: (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Surge Isolation Voltage (Input to Output):
Steady-State Isolation Voltage (Input to Output):
-55°C to +150°C
-55°C to +100°C
260°C for 10s
5656 Vpeak; 4000 Vrms; (note 1)
5300 Vpeak; 3750 Vrms; (note 1)

Input Diode

Power Dissipation:
Derate Linearly:
Forward DC Current:
Forward Current (Peak):
Reverse Voltage:
100mW
1.33mW/°C above 25°C
60mA
1A (10µs 1% duty cycle)
6V

Output Photo SCR

Peak Forward Voltage:
RMS Forward Current:
Peak On-State Current (1 cycle surge, 10ms):
Peak Reverse Gate Voltage:
Power Dissipation:
Derate Linearly:
600V
300mA
3A
5V
400mW
5.3mW/°C above 25°C

Electro-optical Characteristics: (Ta=25°C)

EMITTER PARAMETER CONDITIONS VALUE
VF Forward Voltage IF=10mA 1.3 V Typ
1.65 V Max
IR Reverse Current VR=5V 10 µA Max
CJ Capacitance VAK=0V, f=1MHz 50 pF Typ
DETECTOR PARAMETER CONDITIONS VALUE
VDM Off-State Voltage RGK=10kohm, ID=100µA, TA=100°C 600 V Min
VRM Reverse Voltage RGK=10kohm, IR=100µA, TA=100°C 600 V Min
VTM On-State Voltage ITM=300mA 1.6 V Max
IDM Off-State Current RGK=10kohm, VDM=600V, @ TA=100°C 100 µA Max
...@ TA=25°C 400 nA Max
IRM Reverse Current RGK=10kohm, VRM=600V, @ TA=100°C 100 µA Max
...@ TA=25°C 400 nA Max
dV/dt Critical Rate-of-Rise of Off-State Voltage VAK=600V, RGK=10kohm 25 V/µs Typ
IH Holding Current RGK=10kohm 2 mA Max
COUPLED PARAMETER CONDITIONS VALUE
IFT Input Current to Trigger
H11M3 VAK=6V, RGK=10kohm 10 mA Max
H11M4 20 mA Max
H11M3 VAK=6V, RGK=27kohm 7 mA Max
H11M4 15 mA Max
RIO Isolation Resistance (Input to Output) VIO=500V, (note 1) 100 Gohm Min
CIO Isolation Capacitance (Input to Output) VIO=0, f=1MHz, (note 1) 2 pF Max

Isolation dV/dt Immunity (Input to Output) Figure 10 500 V/µs Min

Notes

1. Measured with input leads shorted together and output leads shorted together.

Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date.

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