ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer

Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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H11F1, H11F2, H11F3
PHOTON COUPLED BILATERAL ANALOG FET

Circuit

Features

As a Remote Variable Resistor

Resistance <=100 ohm to >=300 Mohm.
Linearity >=99.9%.
Shunt Capacitance <=15 pF.
I/O Isolation Resistance >=100 Gohm.

As An Analog Signal Switch

Externally Low Offset Voltage.
60 Vpk-pk Signal Capability.
No Charge Injection or Latchup.
t on, t off <=15 µsec.

Description

The H11F series consist of a Gallium Arsenide Infrared Emitting Diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an isolated FET designed for distortion free control of low level ac and dc analog signals. The H11F series devices are mounted in a dual in line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings


Infrared Emitter

Power Dissipation:
Derate Linearly:
Forward Current (continuous):
Forward Current (peak):
Forward Current (peak):
Reverse Voltage:
150mW
2.0mW/°C above 25°C
60mA
500mA (Pulse Width 100µs 100pps)
3A (Pulse Width 1µs 300pps)
6V

Photo Detector

Power Dissipation:
Derate Linearly:
Breakdown Voltage:
Detector Current (continuous):
300mW
4.0mW/°C above 25°C
±30V (H11F3: ±15V)
±100mA

Total Device (MAX)

Storage Temperature:
Operating Temperature:
Lead Soldering Time (at 260°C):
Surge Isolation Voltage (Input to Output):
Steady State Isolation Voltage (Input to Output):
-55 to +150°C
-55°C to +100°C
10s
H11F1-F2: 3535Vpeak; 2500Vrms
H11F1-F2: 3180Vpeak; 2250Vrms

Individual Electrical Characteristics

INFRARED EMITTER CONDITIONS MIN TYP MAX UNIT
Forward Voltage IF=16mA
1.1 1.75 V
Reverse Current VR=6V

10 µA
Capacitance V=0, f=1MHz
50
pF
PHOTO DETECTOR
Breakdown Voltage-V(BR)46



H11F1, F2 I46=10µA; IF=0 30

V
H11F3 15

V
Off-State Dark Current - I46 V46=15V, IF=0, TA=25°C

50 nA
V46=15V, IF=0, TA=100°C

50 µA
Off-State Resistance - r46 V46=15V, IF=0 300

Mohms
Capacitance - C46 V46=0, IF=0, f=1MHz

15 pF
COUPLED ELECTRICAL CHARACTERISTICS (Ta=25°C) MIN TYP MAX UNIT
On-State Resistance - r46



H11F1 IF=16mA, I46=100µA

200 ohms
H11F2

330 ohms
H11F3

470 ohms
On-State Resistance - r64



H11F1 IF=16mA, I64=100µA

200 ohms
H11F2

330 ohms
H11F3

470 ohms
Isolation Resistance (Input to Output) VIO=500V 100

Gohms
Input to Output Capacitance VIO=0, f=1MHz

2 pF
Turn-On Time - tON IF=16mA, RL=50ohm, V46=5V

15 µs
Turn-Off Time - tOFF

15 µs
Resistance, Non-Linearity and Asymmetry IF=16mA, I46=25µA RMS, f=1KHz

0.1 %



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