Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com
- Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
Circuit
Features
Description
Absolute Maximum
Ratings
Electrical Characteristics
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High Voltage: 200 or 300V
High Isolation: 2500 or 3500 Vpeak
U.L.
Recognised
The H11D1-H11D4 are optically coupled isolators each consisting of a Gallium
Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a
standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications
are guaranteed to a cumulative 0.65% AQL
Absolute Maximum Ratings (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage, Surge (Peak): Input-to-Output Isolation Voltage, Steady State (Peak): |
-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ±2500V (H11D1:±3500V) ±1500V (H11D1:±2100V) |
Input Diode | |
| Forward DC Current: Reverse DC Voltage: Peak Forward Current (1µs p.w. 300pps): Power Dissipation: Derate Linearly: |
60mA 6V 3A 100mW 1.33mW/°C above 25°C |
Output Transistor | |
| Collector-Emitter Voltage BVCER: Emitter-Collector Voltage BVECO: Collector-Base Voltage BVCBO: Power Dissipation: Derate Linearly: |
200V (H11D1-D2:300V) 7V 200V(H11D1-D2:300V) 300mW 4.00mW/°C above 25°C |
| INPUT | PARAMETER | PART | CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|---|
| VF | Forward Voltage | IF=10mA | 1.5 | V | |||
| IR | Reverse Current | VR=6.0V | 10 | µA | |||
| OUTPUT | |||||||
| BVCER | Collector-Emitter Voltage | H11D1-D2 H11D3-D4 |
IF=0, IC=1mA, RBE=1Mohm | 300 200 |
V | ||
| BVEBO | Emitter-Base Voltage | IF=0, IE=100µA | 7 | V | |||
| BVCBO | Collector-Base Voltage | H11D1-D2 H11D3-D4 |
IF=0, IC=100µA | 300 200 |
V | ||
| ICER | Collector-Emitter Dark Current | H11D1-D2 | IF=0, VCE=200V, TA=25°C | 0.1 | µA | ||
| IF=0, VCE=200V, TA=100°C | 250 | µA | |||||
| H11D3-D4 | IF=0, VCE=100V, TA=25°C | 0.1 | µA | ||||
| IF=0, VCE=100V, TA=100°C | 250 | µA | |||||
| COUPLED | PARAMETER | PART | CONDITIONS | MIN | TYP | MAX | UNIT |
| IC/IF | DC Current Transfer Ratio | H11D1-D3 H11D4 |
IF=10mA, VCE=10V, RBE=1Mohm | 20 10 |
% % | ||
| RIO | Input-to-Output Isolation Resistance | VIO=500V, note 1 | 100 | Gohm | |||
| VCE(SAT) | Collector-Emitter Saturation Voltage | IF=10mA, IC=0.5mA, RBE=1Mohm | 0.4 | V | |||
| CIO | Capacitance Input to Output | f=1MHz, VIO=0, note 1 | 2 | pF | |||
| tON | Turn-on Time | VCE=10V, ICE=2mA, RL=100ohm | 5 | µs | |||
| tOFF | Turn-off Time | VCB=10V, ICE=2mA, RL=100ohm | 5 | µs | |||
| Input-Output Isolation Voltage, Surge | H11D1 H11D2-D4 |
Note 1 | 3500 2500 |
Vpk | |||
| Input-Output Isolation Voltage, Steady-State | H11D1 H11D2-D4 |
2100 1500 |
Vpk | ||||
1. Measured with input leads shorted together and output leads shorted
together.
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