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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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Photo-SCR Output
1060-1500 V Isolation
400 Vpeak Forward Voltage
Low
Cost Dual-In-Line Package
The H11C4-H11C6 are optically-coupled isolators consisting of a Gallium
Arsenide infrared emitting diode and light activated silicon controlled
rectifier (SCR) mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to
a cumulative 0.65% AQL.
Absolute Maximum Ratings: (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage, Steady State: |
-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case ±1060 Vdc (H11C5-C6) ±1500 Vdc (H11C4) |
Input Diode | |
| Forward DC Current: Reverse DC Voltage: Peak Forward Current): Power Dissipation: Derate Linearly: |
60mA 5V 3A (1µs p.w. 300pps 100mW 1.33mW/°C above 25°C |
Output Photo SCR | |
| Peak Forward Voltage: RMS Forward Current: Forward Current (Peak): Surge Current: Reverse Gate Voltage: |
400V 300mA 10A (100µs 1% duty cycle) 5A (10ms) 6V |
Package | |
| Power Dissipation: Derate Linearly: |
400mW 5.3mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | VALUE | |
| VF | Forward Voltage | IF=10mA | 1.5 V | Max |
| IR | Reverse Current | VR=3.0V | 10 µA | Max |
| VR | Reverse Breakdown Voltage | IR=10µA | 6.0 V | Min |
| OUTPUT | PARAMETER | CONDITIONS | VALUE | |
| VDM | Peak Off-State Voltage | RGK=10kohm, TA=100°C | 400 V | Min |
| VRM | Peak Reverse Voltage | 400 V | Min | |
| VTM | On-State Voltage | ITM=0.3mA | 1.3 V | Max |
| IDM | Off-State Current | VDM=400V, TA=100°C | 150 µA | Max |
| IRM | Reverse Current | VRM=400V, TA=100°C | 150 µA | Max |
| Capacitance (Anode-Gate) | V=0,f=1MHz | 24 pF | Typ | |
| Capacitance (Gate-Cathode) | 360 pF | Typ | ||
| COUPLED | PARAMETER | CONDITIONS | VALUE | |
| IFT | Input Current to Trigger | |||
| H11C4, H11C5 | VAK=50V, RGK=10kohm | 20 mA | Max | |
| H11C6 | 30 mA | Max | ||
| H11C4, H11C5 | VAK=100V, RGK=27kohm | 11 mA | Max | |
| H11C6 | 14 mA | Max | ||
| RIO | Isolation Resistance | VIO=500V, (note 1) | 100 Gohm | Min |
| Input to Output Capacitance | VIO=0, f=1MHz | 2 pF | Max | |
| dV/dt Input to Output | Figure 1 | 500 V/µs | Min | |
| Input-to-Output Isolation Voltage | ||||
| H11C4 | (Note 1) | 1500 Vrms | Min | |
| H11C5,H11C6 | 1060 Vrms | Min | ||
1. Measured with input leads shorted together and output leads shorted
together.
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