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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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Dual-In-Line Package
High Sensitivity to Low Input Current
High Input-Output Isolation Guaranteed - 5300 Volts Peak
Various lead form options available
The H11B1, H11B2, H11B3 are optically coupled isolators consisting of a
Gallium Arsenide infrared emitter and a silicon photo darlington sensor.
Switching can be accomplished while maintaining a high degree or isolation
between driving and load circuits. They can be used to replace reed and mercury
relays with advantages of long life, high speed switching and elimination of
magnetic fields. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications
are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings: (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Isolation Surge Voltage: |
-55°C to +150°C -55°C to +100°C 260°C for 10s, 1.6mm from case 5300Vac |
Input LED | |
| Forward DC Current: Reverse DC Voltage: Power Dissipation: Derate Linearly: |
60mA 3V 150mW 1.41mW/°C above 25°C |
Output Detector | |
| Collector-Emitter Voltage: Emitter-Base Voltage: Collector-Base Voltage: Collector Current - Continuous: |
25V 7V 30V 100V |
| Power Dissipation: Derate Linearly: |
150mW 1.76mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| VF | Forward Voltage H11B1, H11B2 | IF=10mA | 1.15 | 1.5 | V | |
| Forward Voltage H11B3 | IF=50mA | 1.34 | 1.5 | V | ||
| IR | Reverse Leakage Current | VR=3.0V | 10 | µA | ||
| VR | Capacitance | IR=100µA , V=0V, f=1MHz | 18 | pF | ||
| OUTPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| ICEO | Collector-Emitter Dark Current | VCE=10V | 30 | V | ||
| V(BR)CEO | Collector-Emitter Breakdown V age | IC=10mA | ||||
| V(BR)CBO | Collector-Base Breakdown V age | IC=100µA | ||||
| V(BR)ECO | Emitter-Collector Breakdown V age | IE=100µA | ||||
| hFE | DC Current Gain | IC=5mA, VCE=5V | ||||
| CCE | Collector-Emitter Capacitance | f=1MHz, VCE=5V | 5 | V | ||
| CCB | Collector-Base Capacitance | f=1MHz, VCB=5V | 100 | nA | ||
| CEB | Emitter-Base Capacitance | f=1MHz, VEB=5V | 10 | pf | ||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| IC | Output Collector Current H11B1 | IF=1mA, VCE=5V | 5 | mA | ||
| H11B2 | 2 | mA | ||||
| H11B3 | 1 | mA | ||||
| VCE(SAT) | Collector-Emitter Saturation Voltage | IC=1mA, IF=1mA | 0.7 | 1 | Volts | |
| TON | Turn-On Time | IF=5mA, VCC=10V, RL=100ohm | 3.5 | µS | ||
| TOFF | Turn-Off Time | IF=5mA, VCC=10V, RL=100ohm | 95 | µS | ||
| tR | Rise Time | IF=5mA, VCC=10V, RL=100ohm | 1 | µS | ||
| tF | Fall Time | IF=5mA, VCC=10V, RL=100ohm | 2 | µS | ||
| VISO | Isolation Voltage | f=60Hz, t=1s (note 1) | 7500 | 5 | Vac(pk) | |
| RISO | Isolation Resistance | V=500V (note 1) | 1E11 | ohm | ||
| CISO | Isolation Capacitance | V=0V, f=1Mhz (note 1) | 0.2 | 40 | pF |
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
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