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H11A1, H11A2, H11A3
OPTICALLY COUPLED ISOLATORS

Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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Circuit

Features

2500 Volt Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.

Description

The H11A1, H11A2, H11A3 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL

Absolute Maximum Ratings: (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
± 2500V

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
80mA
3V
3A (t p=10µs)
100mW (derate linearly 1.33mW/°C above 25°C)

Output Transistor

Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector-Base Voltage:
Power Dissipation:
Derate Linearly:
30V
7V
70V
150mW
2.00mW/°C above 25°C

Package

Total Power Dissipation:
Derate Linearly:
250mW
3.3mW/°C above 25°C

Electro-optical Characteristics: (Ta=25°C)

INPUT PARAMETER CONDITIONS MIN TYP MAX UNIT
VF Forward Voltage IF=10mA

1.5 V
IR Reverse Current VR=3V

100 µA
VR Reverse Breakdown Voltage IR=10µA 3

V
OUTPUT PARAMETER CONDITIONS MIN TYP MAX UNIT
BVCEO Collector-Emitter Voltage IC=1mA 30

V
BVECO Emitter-Collector Voltage IE=100µA 7

V
BVCBO Collector-Base Voltage IC=100µA 70

V
ICEO Collector-Emitter Dark Current




H11A1, H11A2 VCE=10V, IB=0

50 nA
H11A3

100 nA
ICBO Collector-Base Dark Current VCB=10V, IE=0

20 nA
CCE Collector-Emitter Capacitance VCE=0
10
pF
HFE
VCE=5.0V, IC=100µA
150

COUPLED PARAMETER CONDITIONS MIN TYP MAX UNIT
IC/IF DC Current Transfer Ratio IF=10mA, VCE=10V



H11A1 50

%
H11A2 20

%
H11A3 10

%
RIO Input-to-Output Isolation Resistance VIO=500V, Note 1 1E11

ohm
VCE(SAT) Collector-Emitter Saturation Voltage IF=50mA, IC=2mA

0.5 V
CIO Capacitance Input to Output f=1MHz, Note 1
0.6
pf
tR Output Rise Time VCC=10V, IC=2mA
2
µs
tF Output Fall Time RL=100ohm
2
µs

Input-Output Isolation Voltage Note 1 2500

V

Notes

1. Measured with input leads shorted together and output leads shorted together.

Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date.

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