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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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4N39, 4N40, CNY30, CNY34

Circuit

Features

Photo-SCR Output
660 V or 1500 V Isolation
400 V Peak Forward Voltage
Low Cost Dual-In-Line Package

Description

The 4N39, 4N40, CNY30 and CNY34 are optically-coupled isolators consisting of a Gallium Arsenide infrared emitting diode and light activated silicon controlled rectifier (SCR) mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings (25°C)

Storage Temperature: -55°C to +150°C
Operating Temperature: -55°C to +100°C
Normal Temperature Range (no derating): -55°C to +50°C
Lead Soldering: 260°C for 10s, 1.6mm from case
Total Device Dissipation: 450mW
Derate Linearly: 9.0mW/°C above 50°C
Steady-State Isolation Voltage (Input-Output): ±660 Vrms (4N39, 4N40)
±1500 Vdc (CNY30, CNY34)

Input Diode (-55°C to 50°C u.o.s.)

Forward DC Current: 60mA
Reverse DC Voltage: 6V
Peak Forward Current: 1A (100µs p.w. 1% duty cycle)
Power Dissipation: 100mW
Derate Linearly: 2.0mW/°C above 50°C

Output Photo SCR (-55°C to 50°C u.o.s.)

Off-State and Reverse Voltage (-55°C to 100°C): 200V (4N39, CNY30)
400V (4N40, CNY34)
Direct On-State Current: 300mA
Surge On-State Current: 10A (100µs 1% duty cycle)
Reverse Gate Voltage: 6V (CNY30, CNY34)
Peak Gate Current: 10mA (CNY30, CNY34)
Output Power Dissipation: 400mW
Derate Linearly: 8mW/°C above 50°C

Electro-optical Characteristics (Ta=25°C)

INPUT PARAMETER CONDITIONS VALUE
VF Forward Voltage IF=10mA 1.5 V Max
IR Reverse Current VR=3.0V 10 µA Max
OUTPUT PARAMETER CONDITIONS VALUE
VDM
&
VRM
Peak Off-State Voltage (Vdm), Peak Reverse Voltage (Vrm)
4N39, CNY30 RGK=10kohm, TA=100°C 200 V Min
4N40, CNY34 400 V Min
VTM On-State Voltage ITM=0.3mA 1.3 V Max
ID Off-State Current
4N39, CNY30 VD=200V, TA=100°C, RGK=10kohm 50 µA Max
4N40, CNY34 VD=400V, TA=100°C, RGK=10kohm 150 µA Max
IR Reverse Current
4N39, CNY30 VR=200V, TA=100°C 50 µA Max
4N40, CNY34 VR=400V, TA=100°C 150 µA Max
COUPLED PARAMETER CONDITIONS VALUE
IFT Input Current to Trigger
CNY30, CNY34 VAK=50V, RGK=10kohm 20 mA Max
4N39, 4N40 30 mA Max
CNY30, CNY34 VAK=100V, RGK=27kohm 11 mA Max
4N39, 4N40 14 mA Max
RIO Isolation Resistance VIO=500V, note 1 100 Gohm Min

Capacitance, Input to Output VIO=0, f=1MHz 2 pF Max
tON Turn-on Time VAK=50V, IF=30mA, RGK=10kohm, RL=200ohm 50 µs Max

dV/dt Input to Output Figure 1 500 V/µs Min

Isolation Voltage, Input-to-Output
CNY30, CNY34 Note 1 ±1500 Vrms Min
4N39, 4N40 660 Vrms Min

Notes

1. Measured with input leads shorted together and output leads shorted together.

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