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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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1500 V or 2500 V Isolation.
High Collector-Emitter Breakdown Voltage.
Low Cost Dual-In-Line Package.
U L Recognised (file No. E91231).
The 4N38, 4N38A are optically coupled isolators consisting of a Gallium
Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a
standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications
are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings: (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: |
-55°C to +150°C
-55°C to +100°C 260°C for 10s, 1.6mm from case 1500Vpeak (4N38) 2500Vpeak (4N38A) |
Input Diode | |
| Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation: Derate Linearly: |
80mA
3V 3A (t p=10µs) 150mW 1.33mW/°C above 25°C |
Output Transistor | |
| Collector-Emitter Voltage: Emitter-Collector Voltage: Collector-Base Voltage: Power Dissipation: Derate Linearly: |
80V
7V 80V 150mW 2.00mW/°C above 25°C |
Package | |
| Total Power Dissipation: Derate Linearly: |
250mW 3.3mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| VF | Forward Voltage | IF=10mA | 1.2 | 1.5 | V | |
| VR | Reverse Breakdown Voltage | IR=10µA | 3 | V | ||
| IR | Reverse Current | VR=3V | 100 | µA | ||
| OUTPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| BVCEO | Collector-Emitter Voltage | IC=1mA | 80 | V | ||
| BVECO | Emitter-Collector Voltage | IE=100µA | 7 | V | ||
| BVCBO | Collector-Base Voltage | IC=100µA | 80 | V | ||
| ICEO | Collector-Emitter Dark Current | VCE=10V, IB=0, TA=25°C | 3.5 | 50 | nA | |
| ICEO | Collector-Emitter Dark Current | VCE=60V, IB=0 | 500 | µA | ||
| ICBO | Collector-Base Dark Current | VCB=60V, IE=0 | nA | |||
| HFE | VCE=5.0V, IC=500µA | 250 | ||||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| IC/IF | DC Current Transfer Ratio | IF=20mA, VCE=1V | 20 | % | ||
| VCE(SAT) | Collector-Emitter Saturation Voltage | IF=20mA, IC=4mA | 1 | V | ||
| RIO | Input-to-Output Resistance | VIO=500V, (note 1) | 10 | ohm | ||
| CIO | Capacitance Input to Output | f=1MHz (note 1) | 0.5 | pf | ||
| TR | Output Rise Time | VCC=10V, IC=10mA | 0.8 | µs | ||
| TF | Output Fall Time | 7 | µs | |||
| Input-Output Isolation Voltage | ||||||
| 4N38 | 60MHz (note 1) | 1500 | V | |||
| 4N38A | 2500 | V | ||||
1. Measured with input leads shorted together and output leads shorted
together.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date.