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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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Very High Current Transfer Ratio (500% Min.)
High Isolation Resistance
Low Coupling Capacitance
Standard Plastic Dip Package
The 4N29, 4N30, 4N31, 4N32, 4N33 are optically coupled isolators consisting
of a Gallium Arsenide infrared emitter and a silicon photo darlington sensor.
Switching can be accomplished while maintaining a high degree or isolation
between driving and load circuits. They can be used to replace reed and mercury
relays with advantages of long life, high speed switching and elimination of
magnetic fields. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications
are guaranteed to a cumulative 0.65% AQL
Absolute Maximum Ratings: (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: |
-55°C to +150°C
-55°C to +100°C 260°C for 10s, 1.6mm from case ±2500 Vdc (4N29, 4N32) ±1500 Vdc (4N30, 4N31, 4N33) |
Input Diode | |
| Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation: Derate Linearly: |
60mA
3V 3A (t p=10µs) 100mW 1.33mW/°C above 25°C |
Output Transistor | |
| Collector-Emitter Voltage: Emitter-Collector Voltage: Power Dissipation: Derate Linearly: |
30V
7V 150mW 2.00mW/°C above 25°C |
Package | |
| Total Power Dissipation: Derate Linearly: |
250mW 3.3mW/°C above 25°C |
| INPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| VF | Forward Voltage | IF=10mA | 1.5 | V | ||
| IR | Reverse Current | VR=3.0V | 100 | µA | ||
| VR | Reverse Breakdown Voltage | IR=100µA | 3 | V | ||
| OUTPUT | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| BVCEO | Collector-Emitter Voltage | IC=1mA | 30 | V | ||
| BVECO | Emitter-Collector Voltage | IE=100µA | 5 | V | ||
| ICEO | Collector-Emitter Dark Current | VCE=10V, IB=0 | 100 | nA | ||
| CCE | Collector-Emitter Capacitance | VCE=0 | 10 | pf | ||
| COUPLED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| IC/IF | DC Current Transfer Ratio 4N31 | IF=10mA, VCE=10V | 50 | mA | ||
| 4N29, 4N30 | IB=0 | 100 | mA | |||
| 4N32, 4N33 | 500 | mA | ||||
| RIO | Input-to-Output Isolation Resistance | VIO=500V, (Note 1) | 1E11 | ohm | ||
| VCE(Sat) | Collector-Emitter Saturation Voltage | IF=8mA, IC=2mA, IB=0 | ||||
| 4N29, 4N30, 4N32, 4N33 | VCC=10V, IC=2mA | 1 | V | |||
| 4N31 | 1.2 | V | ||||
| SWITCHING SPEED | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| T on | Turn-On Time | IC=50mA V,CC=10V | 5 | µs | ||
| T off | Turn-Off Time | |||||
| 4N29, 4N30, 4N31 | IF=200mA, P.W.=1.0m.s. | 40 | µs | |||
| 4N32, 4N33 | 100 | µs | ||||
| Input-to-Output Isolation Voltage | ||||||
| 4N29, 4N32 | Note 1 | 2500 | VDC | |||
| 4N30, 4N31, 4N33 | 1500 | VDC | ||||
Note 1. Measured with input leads shorted together and output leads shorted
together.
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